• ⬅ Abstract
• Contents
• Keywords ➡

Contents

• License
• Acknowledgments
• Declaration
• Publications based on this Thesis
• Abstract
• 1. Introduction
  • Low-dimensional material
  • Promise of low-dimensional materials in transistor scaling
  • Low-dimensional materials for optoelectronics and photonics
  • Motivation
  • Thesis Organizatiom
• 2. Junctionless Tellurium Nanowire Transistor
  • Introduction
  • Synthesis and characterization of Te nanowires
  • Device Fabrication
  • Te nanowire transistor characteristics
  • Nature of Te nanowire-metal contact
  • Field-effect mobility of Te nanowire transistor
  • Performance benchmarking
  • Conclusion
• 3. Self-Aligned Reconfigurable Heterojunction Transistor
  • Introduction
  • Proposed device structure and fabrication
  • Device characterization and p-type mode operation
  • n-Type mode operation
  • Subthreshold swing
  • Conclusion
• 4. Dual Channel High Performance FET
  • Introduction
  • Device structure and fabrication
  • Scalability of the proposed device
  • Contact resistance and gate capacitance
  • Device characteristics
  • Conclusion
• 5. Hot electron engineering for infrared detection
  • Introduction
  • Internal quantum efficiency bottleneck
  • Proposed device structure
  • Engineering the hot electron injection
  • Infrared photodetection performance
  • Frequency response of the detector
  • Conclusion
• 6. Conclusion and Future Scope
  • Conclusion
  • Future Scope
• Appendices
• A. Junctionless Tellurium Nanowire FET
  • Synthesis of Te nanowires and device fabrication
    • Chemical synthesis of Te nanowires
    • Material and structural characterization
    • Device fabrication and characterization
  • Cross-section view of the nanowire transistor
  • Drift diffusion simulation of junctionless FET
• B. Self-Aligned Reconfigurable Heterojunction Transistor
  • Raman spectrum of SnSe₂ crystal
  • Transfer characteristics of WSe₂ transistor
• C. Dual Channel High-Performance FET
  • Two-dimensional drift-diffusion simulation of 2D material based transistor
  • Characteristics of another double-channel device
• D. Hot electron engineering for infrared detection
  • Hot-electron photocurrent model
  • Response of structure D2 to various wavelengths
  • Characterization of additional D3 device
  • Frequency response of D3 for excitation with 633 nm radiation

• ⬅ Abstract
• Contents
• Keywords ➡